Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance
نویسندگان
چکیده
منابع مشابه
Resonant tunneling in graphene pseudomagnetic quantum dots.
Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant ...
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The main purpose of energy harvesting is to collect energy from the ambient and to convert it into useful work. Of particular interest are thermoelectric energy harvesters. They can be applied, e.g., in computer chips where they convert waste heat back into electricity. One of the central goals of research in this field is to find highly efficient thermoelectrics. Mesoscopic solid-state physics...
متن کاملPowerful and efficient energy harvester with resonant-tunneling quantum dots
Andrew N. Jordan,1,* Björn Sothmann,2 Rafael Sánchez,3 and Markus Büttiker2 1Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA 2Département de Physique Théorique, Université de Genève, CH-1211 Genève 4, Switzerland 3Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Cantoblanco, E-28049 Madrid, Spain (Received 25 October 2012; published 13 Febru...
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We study resonant Andreev tunneling through a strongly interacting quantum dot connected to a normal and to a superconducting lead. We obtain a formula for the Andreev current and apply it to discuss the linear and non-linear transport in the nonperturbative regime, where the effects of the Kondo resonance on the two particle tunneling arise. In particular we notice an enhancement of the Kondo ...
متن کاملGeometric broadening in resonant tunneling through Si quantum dots
The current through a resonant tunneling diode consisting of Si quantum dots embedded in a SiO2 matrix is calculated and the resonance broadening effects caused by distributions of quantum dot diameter and asymmetric barrier thicknesses are simulated. It is demonstrated that a size distribution is extremly critical for the use of these structures as selective energy contacts for hot carrier sol...
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ژورنال
عنوان ژورنال: npj Quantum Materials
سال: 2017
ISSN: 2397-4648
DOI: 10.1038/s41535-017-0029-4